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| INCHANGE Semiconductor isc Product Specification 2SA877 isc Silicon PNP Power Transistor DESCRIPTION *High Power Dissipation: PC= 100W(Max.)@TC=25 *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) APPLICATIONS *Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature -4 A PC 100 W Tj 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SA877 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -0.1 mA hFE DC Current Gain IC= -3A ; VCE= -4V 30 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 255 pF fT Current-Gain--Bandwidth Product IE= 0.5A; VCE= -12V 15 MHz isc Websitewww.iscsemi.cn |
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